Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2008-07-29

2008-07-29

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S585000, C438S710000, C430S317000, C216S041000, C216S049000, C216S051000, C216S067000, C216S079000

Reexamination Certificate

active

07405161

ABSTRACT:
Method for fabricating a semiconductor device in which a by-product of etching is deposited on a photoresist film for using as a mask. The method for fabricating a semiconductor device includes the steps of depositing a polysilicon, and a bottom anti-refection coating on an entire surface of a substrate in succession, forming a photoresist film pattern on a predetermined portion of the bottom anti-refection coating, etching the bottom anti-refection coating by using the photoresist film pattern to deposit by-product of the etching on sidewalls of the photoresist pattern to form spacers, and etching the polysilicon by using the photoresist film pattern and the spacers, to form a line.

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