Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1994-11-16

1995-09-19

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 8, 437228, 437234, 437238, H01L 2120

Patent

active

054515416

ABSTRACT:
An insulating film is provided on a single crystal silicon layer of a SOI substrate, and a first groove for device isolation and a second groove for thickness measurement are formed to expose a surface of a silicon substrate of the SOI substrate. Then, the first and second grooves are filled with a filling film, and the filling film is etched back, so that the first groove is still filled with the filling film, while the filling film which have filled the second groove is removed to expose the surface of the silicon substrate, because the second groove has a width larger than that of the first groove.

REFERENCES:
"'91 VLSI Symposium"; pp. 51 to 52; Tokyo, Japan; H. Nishizawa et al, Fully SiO.sub.2 Isolated High Speed Self-Aligned Bipolar Transistor on Thin SOI (1991).

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