Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1995-06-06

1996-06-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 26, 437 34, 437 57, H01L 218238

Patent

active

055255329

ABSTRACT:
The semiconductor device comprising a P type semiconductor substrate, first and second P-wells, an N-well between the first and the second P-wells, trench element-isolating films for electrically separating the wells from each other and the first P-well from the P type semiconductor substrate, and an N type buried region formed below a first P-well between the trench element-isolating films, which is suitable to high integration and improved in operating speed.

REFERENCES:
patent: 4808548 (1989-02-01), Thomas et al.
patent: 5006476 (1991-04-01), De Jong et al.
patent: 5015594 (1991-05-01), Chu et al.
patent: 5356821 (1994-10-01), Naruse et al.

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