Method for fabricating a semiconductor device

Metal working – Method of mechanical manufacture – Assembling or joining

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29576B, 29578, 148187, H01L 2126

Patent

active

043763367

ABSTRACT:
The invention provides a method for fabricating a semiconductor device comprising the steps of: forming an insulating layer on a semiconductor substrate; selectively forming an oxidation preventive film on the surface of said insulating layer; depositing polycrystalline silicon on the entire surface of said substrate including said oxidation preventive film; selectively etching said polycrystalline silicon so as to leave said polycrystalline silicon only around the sides of said oxidation preventive film by an etching method having a directivity perpendicular to the surface of said substrate; ion-implanting an impurity for preventing inversion in said substrate using as a mask said oxidation preventive film and said polycrystalline silicon remaining therearound; and forming a field insulator film including an oxide of said polycrystalline silicon by oxidizing the surface of said substrate. A higher integration and a higher reliability of elements may be attained according to the method of the invention.

REFERENCES:
patent: 3873373 (1975-03-01), Hill
patent: 3913211 (1975-10-01), Seeds et al.
patent: 4179311 (1979-12-01), Athanas
patent: 4246044 (1981-01-01), Yanase
patent: 4272308 (1981-06-01), Varshney
patent: 4287661 (1981-09-01), Stoffel

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