Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1981-10-02

1983-10-18

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, H01L 21225

Patent

active

044103751

ABSTRACT:
A method for fabricating a semiconductor device is disclosed which includes a step of forming contact holes in insulating films on a substrate, forming a silicate glass layer containing an impurity over the entire surface, and performing the phosphorus getter treatment using POCl.sub.3 at a high temperature. Even when the phosphorus getter treatment is performed after the formation of the contact holes, the substrate or electrodes exposed through the contact holes may not be reduced in thickness or damaged. The impurity may be diffused into the substrate from the silicate glass layer through the contact holes.

REFERENCES:
patent: 3457125 (1969-07-01), Kerr
patent: 3913211 (1975-10-01), Seeds et al.
patent: 4079504 (1978-03-01), Kosa
patent: 4224089 (1980-09-01), Nishimoto et al.
patent: 4270262 (1981-06-01), Hori et al.

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