Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1992-06-08

1993-04-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 24, 437 48, 437 52, 437 60, 437919, H01L 2170

Patent

active

052022803

ABSTRACT:
In a method for fabricating a semiconductor device according to the invention, a tantalum oxide layer is formed on a semiconductor substrate, titanium ions are injected into the tantalum oxide layer, and the tantalum oxide layer is heated to be fined.

REFERENCES:
patent: 4876176 (1989-10-01), Caluiello et al.
patent: 5025741 (1991-06-01), Suwanai et al.
patent: 5057447 (1991-10-01), Paterson

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