Fishing – trapping – and vermin destroying
Patent
1990-02-01
1992-04-28
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437201, 437247, 148DIG3, 148DIG147, H01L 21477
Patent
active
051089530
ABSTRACT:
A method for fabricating a semiconductive device is described, wherein a semiconductive substrate having a thermally shrinkable, refractory metal silicide thin film is provided, on which an insulating film on the metal silicide thin film is formed. The metal silicide thin film is thermally treated in an atmosphere containing hydrogen. By this, no morphological degradation is observed in the silicide thin film without an increase of the resistance.
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patent: 4860086 (1989-08-01), Nakamura et al.
Full text of Jun-ru.
Full text of Chang.
C. D. Rude et al, "Characterization of NbSi.sub.2 Thin Films", Journal of Applied Physics, vol. 53, No. 8 Aug. 1982 pp. 5703-5709.
T. P. Chow et al, "The Effect of Annealing on the Properties of Silicidized Molybdenum Thin Films", Journal of Applied Physics vol. 52(10) Oct. '81 pp. 6331-6336.
S. T. Chang et al, "Effects of TiSalicide Process on MOSFET Characteristics" IEEE Transactions of Election Devices, vol. 36, No. 1, pt 1 pp. 145-147, Jan. '89.
X. Q. Jun-ru, "An Ivestigation of a Novel Method for Forming Ti Silicide," Acta Electron. Sin., vol. 15, No. 3, May (1987) pp. 15-21.
"Morphological Degradation of TiSi.sub.2 on (100) Silicon" by Revesz et al; Appl. Phys. Lett. 48(23), Jun. 9, 1986; pp. 1591-1593.
Hearn Brian E.
Holtzman Laura M.
Matsushita Electric - Industrial Co., Ltd.
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