Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-04-28
1985-07-23
Ozaki, George T.
Metal working
Method of mechanical manufacture
Assembling or joining
29576E, 29578, 148175, 148187, H01L 21205
Patent
active
045301492
ABSTRACT:
A vertical IGFET device is formed on a substrate which includes a monocrystalline silicon portion at a surface thereof. An apertured insulated gate electrode is disposed on the substrate surface such that an area of monocrystalline silicon is exposed through the aperture. An epitaxial silicon region extends from the substrate surface within the gate electrode aperture and is appropriately doped such that a predetermined voltage applied to the insulated gate electrode forms a channel region in the epitaxial region adjacent thereto. The vertical IGFET is fabricated by a self-aligned technique, wherein the insulated gate electrode includes a first, underlying insulating layer and a second, overlying insulating layer. The second insulating layer protects the gate electrode when the first insulating layer is defined.
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Applied Physics Letters, vol. 16, No. 5, Mar. 1, 1970, The "Epicon" Array: A New Semiconductor Array-Type Camera Tube Structure, W. E. Engeler et al., pp. 202-205.
IEEE Transactions, vol. ED-18, No. 11, Nov. 1971, pp. 1036-1042, The Epicon Camera Tube: An Epitaxial Diode Array Vidicon, S. M. Blumfeld et al.
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Ipri Alfred C.
Jastrzebski Lubomir L.
Kokkas Achilles G.
Cohen Donald S.
Glick Kenneth R.
Morris Birgit E.
Ozaki George T.
RCA Corporation
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