Method for fabricating a self-aligned metal oxide field effect t

Details Method for fabricating a self-aligned metal oxide field effect t Method for fabricating a self-aligned metal oxide field effect t

1976-03-02

1977-09-20

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, H01L 2122

Patent

active

040494772

ABSTRACT:
An improved and simplified method of fabricating field effect transistors in metal oxide semiconductor integrated circuits advantageously employs the differential growth rate, under certain temperature conditions, between oxide on silicon wherein phosphorous has been diffused, and on silicon without such diffusion. The improved method of fabrication reduces the number of fabrication steps required, while simultaneously producing field effect transistors with superior operation speeds.

REFERENCES:
patent: 3434021 (1969-03-01), Hofstein
patent: 3442721 (1969-05-01), McCaldin et al.
patent: 3899372 (1975-08-01), Esch et al.
patent: 3910804 (1975-10-01), Alcott

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