Method for fabricating a self-aligned contact

Details Method for fabricating a self-aligned contact Method for fabricating a self-aligned contact

1998-09-08

1999-12-14

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 17, 216 18, 216 39, 438713, 438734, 438745, H01L 2100

Patent

active

060017430

ABSTRACT:
A method for minimizing the dimension of a contact forms a thick dielectric layer on a provided substrate first, and then forms a contact on the first dielectric layer and expose the substrate by performing a slope etching process. The contact with the target contact size is obtained by partially removing the thick dielectric layer. Since the target contact size is obtained by a self-aligned method, the upper diameter of the contact is not limited by a conventional fabrication process. Furthermore, after a contact is formed, it is optional to fill the contact with filler. Even after a desired contact is formed in the case that filler is used, the remains of the filler can be either kept or removed depending on the conductivity of the filler.

REFERENCES:
patent: 5262346 (1993-11-01), Bindal et al.
patent: 5318663 (1994-06-01), Buti et al.
patent: 5502008 (1996-03-01), Hayakawa et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.

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