Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming lateral transistor structure
Reexamination Certificate
2007-10-16
2007-10-16
Pham, Thanhha S. (Department: 2813)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Forming lateral transistor structure
C438S321000, C438S364000, C257SE21379, C257SE21507
Reexamination Certificate
active
10952256
ABSTRACT:
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post situated on the top surface of the base. The bipolar transistor also comprises a conformal layer situated on a first and a second side of the sacrificial post, where the conformal layer is not separated from the first and second sides of the sacrificial post by spacers. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer, the sacrificial post, and the base. The sacrificial planarizing layer has a first thickness in a first region between the first and second sides of the sacrificial post and a second thickness in a second region outside of the first and second sides of the sacrificial post, where the second thickness is greater than the first thickness.
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Kalburge Amol
Yin Kevin Q.
Farjami & Farjami LLP
Newport Fab LLC
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