Method for fabricating a resistive memory

Details Method for fabricating a resistive memory Method for fabricating a resistive memory

2008-05-06

2008-05-06

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21075

Reexamination Certificate

active

11344533

ABSTRACT:
A method for fabricating a resistively switching memory cell is provided. The method includes the following steps: depositing a first electrode, applying a layer of a chalcogenide compound to the first electrode, applying a layer of silver or copper, and operating a noble gas plasma in a back-sputtering mode in order to effect silver or copper diffusion into the layer of the chalcogenide compound. Optionally, and if appropriate, further layers for the second electrode are then deposited.

REFERENCES:
patent: 4550074 (1985-10-01), Tzinis et al.
patent: 6365510 (2002-04-01), Schmidbauer et al.
patent: 2003/0186504 (2003-10-01), Li et al.
patent: 2004/0014312 (2004-01-01), Kunishima et al.
patent: 63029504 (1988-02-01), None

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