Fishing – trapping – and vermin destroying
Patent
1989-09-27
1991-04-23
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437141, 437247, 437956, H01L 2166, H01L 2122
Patent
active
050100238
ABSTRACT:
A rectifier is fabricated from a P-N junction having a P-type semiconductor layer and an adjacent N-type semiconductor layer. A mesa structure is formed in at least one of said layers. Impurities are deposited at the top of the mesa to form a high concentration region in the surface thereof. The impurities are diffused from the top surface of the mesa toward the P-N junction, whereby the mesa geometry causes the diffusion to take on a generally concave shape as it penetrates into the mesa. The distance between the perimeter of the high concentration region and the wafer substrate is therefore greater than the distance between the central portion of said region and the wafer substrate, providing improved breakdown voltage characteristics and a lower surface field. Breakdown voltage can be measured during device fabrication and precisely controlled by additional diffusions to drive the high concentration region to the required depth.
REFERENCES:
patent: 4740477 (1988-04-01), Einthoven et al.
Ghandhi, S. K., VLSI Fabrication Principles, 1983, pp. 10-12, 542-544.
Einthoven Willem G.
Mitchell Muni M.
Chaudhari Chandra
Chaudhuri Olik
General Instrument Corporation
Lipsitz Barry R.
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