Method for fabricating a radiation hardened oxide having two por

Details Method for fabricating a radiation hardened oxide having two por Method for fabricating a radiation hardened oxide having two por

1985-09-09

1987-06-30

Chaudhuri, Olik

Metal working

Method of mechanical manufacture

Assembling or joining

148DIG118, 148 15, 427 93, 4272553, H01L 21473, B05D 512

Patent

active

046759786

ABSTRACT:
A method for making a partially radiation hardened oxide comprises forming a first portion of an oxide layer on a semiconductor body of material at a temperature between about 950.degree. C. and 1400.degree. C., preferably between about 1000.degree. C. and 1200.degree. C. Thereafter a second portion of the oxide layer is formed between the semiconductor body and the first oxide layer at a temperature between about 850.degree. C. and 900.degree. C., preferably at about 875.degree. C.

REFERENCES:
patent: 4139658 (1979-02-01), Cohen et al.
patent: 4277883 (1981-07-01), Kaplan
patent: 4377605 (1983-03-01), Yamamoto
patent: 4634473 (1987-01-01), Swartz et al.
"The Oxidation of Shaped Silicon Surfaces", J. Electrochemical Soc., vol. 129, (Jun. 1982), pp. 1278-1282.
"Radiation--Induced Interface States of Poly--Si Gate MOS Capacitors Using Low Temperature Gate Oxidation", K. Naruke et al., IEEE Trans. on Nuclear Science, vol. NS--30, No. 6, Dec. 1983, pp. 4054-4058.

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