Method for fabricating a radiation hardened oxide having structu

Metal treatment – Compositions – Heat treating

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29571, 29576B, 29576W, 148187, 148DIG82, 148DIG83, 357 51, 357 91, H01L 21265, H01L 2120

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046344730

ABSTRACT:
A method for making a partially radiation hardened oxide adjacent an edge comprises forming an oxide layer on another layer with a temperature between about 975.degree. C. and 1400.degree. C., preferably between about 1000.degree. C. and 1200.degree. C. Then the structure of the oxide layer is damaged, such as by ion implantation, preferably with an inert element. Thereafter the oxide layer is annealed at a temperature between about 850.degree. C. and 900.degree. C., preferably at about 875.degree. C.

REFERENCES:
patent: 3799813 (1974-03-01), Danchenko
patent: 4001049 (1977-01-01), Baglin et al.
patent: 4043024 (1977-08-01), Iwamatsu
patent: 4047974 (1977-09-01), Harari
patent: 4081292 (1978-03-01), Aoki et al.
patent: 4162176 (1979-07-01), Tsoda
patent: 4197144 (1980-04-01), Kirkpatrick et al.
patent: 4412868 (1983-11-01), Brown et al.
patent: 4454524 (1984-06-01), Spence
patent: 4466839 (1984-08-01), Dathe et al.
Chou et al., Jour. Appl. Phys. 41 (1970) 1731.
Jager et al., Thin Solid Films, 123 (May, 1985) 159.
Lee et al., IEEE Trans. Nuclear Science, NS-24 (1977) 2205.
Ipri et al., IEEE Trans. Electron Devices, ED-23 (1976) p. 1110.
"Radiation Hardening of Thermal Oxides on Silicon by Displacement Damage", R. P. Donovan et al., J. Appl. Phys., vol. 43, No. 6, Jun. 1972, pp. 2897-2899.
"The Oxidation of Shaped Silicon Surfaces", J. Electrochemical Soc., vol. 129, (Jun. 1982), pp. 1278-1282.
"Radiation-Induced Interface States of Poly-Si Gate MOS Capacitors Using Low Temperature Gate Oxidation", K. Naruke et al., IEEE Trans. on Nuclear Science, vol. NS-30, No. 6, Dec. 1983, pp. 4054-4058.

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