Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-09-12
2006-09-12
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257SE21085
Reexamination Certificate
active
07105370
ABSTRACT:
A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III–V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
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Bader Stefan
Fehrer Michael
Hahn Berthold
Härle Volker
Lugauer Hans-Jürgen
Greenberg Laurence A.
Locher Ralph E.
Malsawma Lex H.
Osram GmbH
Smith Matthew
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