Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-02-01
2005-02-01
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S101000, C257S102000, C257S079000, C257S080000, C257S081000, C257S094000
Reexamination Certificate
active
06849878
ABSTRACT:
A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
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Bader Stefan
Fehrer Michael
Hahn Berthold
Härle Volker
Lugauer Hans-Jürgen
Forde Remmon R.
Mayback Gregory L.
OSRAM Opto Semiconductors GmbH
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