Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Isolation by pn junction only
Patent
1996-06-12
1999-06-15
Bowers, Charles
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Isolation by pn junction only
438305, 257341, H01L 21265
Patent
active
059131306
ABSTRACT:
A method for fabricating a field effect transistor using the supporting substrate as a device layer in accordance with the present invention comprises several steps. To fabricate the field effect transistor, an epitaxial layer is grown on one surface of a substrate having an opposing surface, the epitaxial layer forming a drain for the transistor. Once the epitaxial layer is grown, the substrate is thinned to an appropriate device thickness and then a gate and a source for the transistor are formed on the opposing surface of the substrate. In an alternative embodiment, a polysilicon layer is used instead of the epitaxial layer. A field effect transistor fabricated from the method described above includes an epitaxial layer formed on one surface of a substrate having an opposing surface, the epitaxial layer forming a drain for the transistor and a gate and a source for the transistor formed on the other surface of the substrate. Again, a polysilicon layer may be used instead of the epitaxial layer in the transistor.
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Blum David S
Bowers Charles
Harris Corporation
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