Method for fabricating a polycrystalline silicon resistor

Details Method for fabricating a polycrystalline silicon resistor Method for fabricating a polycrystalline silicon resistor

1989-06-30

1990-09-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 24, 437 27, H01L 21265

Patent

active

049544543

ABSTRACT:
A method for fabricating a semiconductor device which is capable of enlarging diameter of crystal grain of a polycrystalline conductor by a heat treatment which is carried out after surface lower portion of the polycrystalline conductor is made amorphous with ion-implanting atoms in the polycrystalline conductor by predetermined accelerating energy to thereby improve the uniformity of size of crystal grain. By this method, the uniformity of impurity concentration distribution is improved in the polycrystalline conductor and also in the impurity diffusion area, and further, the uniformity of resistance of a resistor or conductor formed by the polycrystalline conductor is improved.

REFERENCES:
patent: 4617066 (1986-10-01), Vasudev
patent: 4659392 (1987-04-01), Vasudev
patent: 4682407 (1987-07-01), Wilson et al.
patent: 4753895 (1988-06-01), Mayer et al.

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