Method for fabricating a polycrystal silicon thin film transisto

Details Method for fabricating a polycrystal silicon thin film transisto Method for fabricating a polycrystal silicon thin film transisto

1995-03-16

1997-12-23

Niebling, John

Fishing, trapping, and vermin destroying

437 41, 437239, 437978, H01L 2184

Patent

active

057006997

ABSTRACT:
A method for fabricating the polycrystal silicon TFT under a low temperature which has an improved electron mobility, comprises the steps of forming an oxide film on a substrate, depositing a polycrystal silicon on the oxide film and patterning the polycrystal silicon so that source and drain regions and a channel region remain, growing a gate insulating layer on the patterned polycrystal silicon by ECR plasma thermal oxidation, depositing a material for a gate on the whole surface and removing the material and the gate insulating layer in portions except for a gate region to form the gate, and performing ion implantation on the exposed areas of the polycrystal silicon to form the source and drain regions.

REFERENCES:
patent: 4987102 (1991-01-01), Nguyen et al.
patent: 5235189 (1993-08-01), Hayden et al.
patent: 5300455 (1994-04-01), Vuillermoz et al.
patent: 5424225 (1995-06-01), Yamaguchi et al.
Lee et al., "High Performance Low Temperature Polysilicon Thin Film Transistor Using ECR Plasma Thermal Oxide as Gate Insulator", IEEE Electron Device Letters, vol. 15, No. 8, Aug. 1994, pp. 301-303.
Lee et al., "ECR Plasma Oxidation Effects on Performance and Stability of Polysilicon Thin Film Transistors", IEDM, pp. 20.3.1-20.3.4, 1994 month unknown.
Little et al., Japanese Journal of Applied Physics, 30(12B), pp. 3724-3728 (1991), month unknown.

Affiliated with

Also associated with

Rating

Method for fabricating a polycrystal silicon thin film transisto does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a polycrystal silicon thin film transisto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a polycrystal silicon thin film transisto will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802126