Method for fabricating a plurality of semiconductor chips

Details Method for fabricating a plurality of semiconductor chips Method for fabricating a plurality of semiconductor chips

2007-11-06

2007-11-06

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

Reexamination Certificate

active

10835732

ABSTRACT:
A semiconductor material (5) is grown in the windows (4) of a patterned mask layer (3) on a substrate (1). The semiconductor material (5) grows together over the mask layer (3) with semiconductor material (5) from adjacent windows to form a largely planar surface (7), which is suitable for the further growth of a component layer sequence (9). Through the choice of a substrate (1) having a smaller thermal expansion coefficient than the semiconductor material (5), particularly strong tensile stresses occur in the semiconductor material (5) or the component layer sequence (9) during cooling, which stresses lead to cracking. Since the semiconductor material (5) that has grown together forms a so-called coalescence region (6), having a high density of imperfections in the crystal lattice, these thermally governed cracks (13) are more likely to occur in this region. If the semiconductor bodies are singulated along these regions, these regions high in defects can be removed during the singulation, and a semiconductor body of high crystal quality can be mass produced.

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