Method for fabricating a planar ion-implanted GaAs MESFET with i

Details Method for fabricating a planar ion-implanted GaAs MESFET with i Method for fabricating a planar ion-implanted GaAs MESFET with i

1995-03-16

1996-07-16

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 44, 437 40, 437912, 437154, 437133, H01L 21265

Patent

active

055366660

ABSTRACT:
An improved substantially planar and easy to manufacture field-effect-transistor (FET) includes a guard region between an n+ drain region and the remainder of the device, which enables the breakdown voltage of the FET to be substantially increased under open-channel conditions without adversely impacting other important device characteristics.

REFERENCES:
patent: 4956308 (1990-09-01), Griffin et al.
patent: 4992387 (1991-02-01), Tamura
patent: 5336627 (1994-08-01), Pacou et al.
patent: 5344788 (1994-09-01), Noda

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