Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-02-08
2011-02-08
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257S081000, C257S102000, C372S007000, C372S096000
Reexamination Certificate
active
07883914
ABSTRACT:
The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro
ano-structured mode selective lateral layer, where the micro
ano-structured layer is obtained by well controlled local etching. The invention enables control of the micro
ano-structured layer thickness with very high precision. In particular, the invention relates to a method for fabricating a VCSEL with a micro
ano-structured mode selective layer for controlling the VCSELs transverse electromagnetic modes.
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Birkedal Dan
Bischoff Svend
Juhl Michael
Madsen Magnus Hald
Romstad Francis Pascal
Alight Technologies A/S
Bent Stephen A.
Foley & Lardner LLP
Stark Jarrett J
Tobergte Nicholas
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