Method for fabricating a photomask pattern

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430 22, 430394, 355 53, 356401, G03F 900

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046109404

ABSTRACT:
A method for fabricating unit patterns each having the same shape and size for a semiconductor die on a photomask pattern area of a photomask. By designating a matrix having rows and columns for the unit patterns on the photomask pattern area, the fabrication is made in the order of two exposing modes. In the first exposing mode, the fabrication is made by exposing respectively an optical image for the unit pattern on selected several matrix elements placed as far as possible away from each other in the photomask pattern area; in the second exposing mode, the exposure of the unit pattern is made along the row of the matrix elements except for the elements which have been exposed in the first exposing mode, until the exposure for all unit patterns are made by shifting sequentially the exposure to the next row. These exposures of the unit patterns, thusly are made with vernier pattern producing overlapped vernier patterns when the exposures of the first and the second exposing modes are made. Thus, after all the unit patterns have been printed on the photomask base plate, an inspection of the positions of the unit patterns can be made by observing some of the overlapping vernier patterns and measuring the accumulated shears which are produced in the second exposing mode.

REFERENCES:
patent: 4362385 (1982-12-01), Lobach
patent: 4388386 (1983-06-01), King et al.

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