Method for fabricating a phase shifting mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430322, 430324, 430325, 430326, 430328, 430330, G03F 900

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054647126

ABSTRACT:
A method for fabricating a phase shifting mask suitable for positive photoresist process. The method includes the steps of: (a) forming a plurality of opaque layer patterns (44) in an array at a fixed interval from each other in their width direction on a substrate (41); (b) coating an interlayer (45) on and covering the opaque layer patterns; (c) forming interlayer patterns (45) on the substrate at both longitudinal sides of each opaque layer pattern by etching the interlayer; (d) forming a plurality of insulation films (46) on the substrate between adjacent pairs of the opaque layer patterns on which the interlayer patterns are formed; (e) removing the remaining interlayer under each of the insulation films; and (f) forming a phase shifter (47) having a ninety degree area (47-2) in a region where the interlayer has been removed and a one hundred and eighty degree area (47-1) in the remainder of the region by heating the insulation film.

REFERENCES:
patent: 4968583 (1990-11-01), Ohshio et al.
patent: 5229255 (1993-07-01), White
Article entitled "Specifying Phase Shift Mask Image Quality Parameters" by P. D. Buck and M. L. Rieger, published in the SPIE vol. 1604 11th Annual BACUS Symposium on Photomask Technology (1991).

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