Method for fabricating a pattern

Details Method for fabricating a pattern Method for fabricating a pattern

2011-05-10

2011-05-10

Tran, Binh X (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S724000, C438S736000, C438S756000, C438S757000

Reexamination Certificate

active

07939451

ABSTRACT:
A method for fabricating a patter is provided as followed. First, a material layer is provided, whereon a patterned hard mask layer is formed. A spacer is deposited on the sidewalls of the patterned hard mask layer. Then, the patterned hard mask layer is removed, and an opening is formed between the adjacent spacers. Afterwards, a portion of the material layer is removed to form a patterned material layer by using the spacer as mask.

REFERENCES:
patent: 6638441 (2003-10-01), Chang et al.
patent: 6734107 (2004-05-01), Lai et al.
patent: 2005/0272259 (2005-12-01), Hong
patent: 2006/0068596 (2006-03-01), Dobuzinsky et al.
patent: 2006/0240361 (2006-10-01), Lee et al.
patent: 2008/0054483 (2008-03-01), Lee et al.
patent: 2008/0122125 (2008-05-01), Zhou
patent: 200701439 (2007-01-01), None
Chinese Examination Report of Taiwan Application No. 096119575, dated Jul. 19, 2010.

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