Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2006-09-19
2006-09-19
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Packaging or treatment of packaged semiconductor
C438S033000, C438S044000
Reexamination Certificate
active
07109049
ABSTRACT:
Provided is a method for fabricating a nitride semiconductor light-emitting device including a nitride semiconductor substrate having a groove and a ridge formed on the top surface thereof so as to extend in the shape of stripes and a nitride semiconductor growth layer consisting of a plurality of nitride semiconductor layers laid on top of the nitride semiconductor substrate. The method involves a step of forming a 10 μm or more wide flat region above at least either of the groove and ridge by forming the nitride semiconductor growth layer on top of the nitride semiconductor substrate so that the height of the nitride semiconductor growth layer laid above the groove is smaller than the height of the nitride semiconductor growth layer laid above the ridge.
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Kamikawa Takeshi
Kaneko Yoshika
Takakura Teruyoshi
Morrison & Foerster / LLP
Mulpuri Savitri
Sharp Kabushiki Kaisha
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