Method for fabricating a monolithic semiconductor device with in

Details Method for fabricating a monolithic semiconductor device with in Method for fabricating a monolithic semiconductor device with in

1995-09-05

1996-08-27

Fourson, George

Fishing, trapping, and vermin destroying

437901, 437921, 216 11, H01L 21461, H01L 214757

Patent

active

055500900

ABSTRACT:
A method for fabricating a monolithic semiconductor device with integrated surface micromachined structures is provided. A semiconductor substrate (10) has an interconnection layer (14) and a first sacrificial layer (16) overlying the substrate (10). Sensor areas (30) and IC areas (40) are formed by patterning the first sacrificial layer (16). A patterned sensor structural layer (32) is formed within sensor area (30) and protected by second sacrificial layer (34) and seal layer (36) while IC elements are formed in IC area (40). Subsequent to IC processing a RTA anneal is performed to relieve stress in sensor layer (32). Sensor area (30) is electrically coupled to IC area (40) and sacrificial layers (16, 34) removed to free sensor elements in sensor areas (40).

REFERENCES:
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5337606 (1994-08-01), Bennett et al.
patent: 5343064 (1994-08-01), Spangler et al.
patent: 5417111 (1995-05-01), Sherman et al.
patent: 5470797 (1995-11-01), Mastrangelo
Ristic et al., Motorola, Inc. (Semiconductor Products Sector), "Integration of Surface Micromachined Dynamic Structures".
R. T. Howe et al., Sensors and Actuators, "Polycrystalline and Amorphous Silicon Micromechanical Beams: Annealing and Mechanical Properties", 1983, pp. 447-454.
Putty et al. --R. T. Howe--Robinson et al., Sensors and Actuators, "Process Integration for Active Polysilicon Resonant Microstructures", 1989, pp. 143-151.

Affiliated with

Also associated with

Rating

Method for fabricating a monolithic semiconductor device with in does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a monolithic semiconductor device with in, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a monolithic semiconductor device with in will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1056134