Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Reexamination Certificate
2011-03-22
2011-03-22
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
C438S309000, C438S311000, C257SE27053
Reexamination Certificate
active
07910448
ABSTRACT:
Fabrication of a mono-crystalline emitter using a combination of selective and differential growth modes. The steps include providing a trench (14) formed on a silicon substrate (16) having opposed silicon oxide side walls (12); selectively growing a highly doped mono-crystalline layer (18) on the silicon substrate in the trench; and non-selectively growing a silicon layer (20) over the trench in order to form an amorphous polysilicon layer over the silicon oxide sidewalls.
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Magnee Petrus
Meunier-Beillard Philippe
NXP B.V.
Sarkar Asok K
Slutsker Julia
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