Method for fabricating a MISFET including a common contact windo

Details Method for fabricating a MISFET including a common contact windo Method for fabricating a MISFET including a common contact windo

1990-07-26

1993-06-15

Quach, T. N.

Fishing, trapping, and vermin destroying

437 29, 437 57, 437154, 437187, 148DIG106, H01L 21336

Patent

active

052197700

ABSTRACT:
A semiconductor device comprising a drain and source region formed in a semiconductor substrate is provided. In order to provide a semiconductor device having a high packing density of the circuit elements, the contact windows for the source region and substrate region are combined into one opening in the source region. A common contact region is formed in a portion of the contact window for the source region by doping opposite conductivity type impurities. The depth of the converted region is deep enough to extend to the substrate. By connecting the source region and the substrate region in the common contact hole, the positioning margin and the wiring for connecting them are unnecessary and thus, the packing density of the devices in the MIS IC is increased.

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Electronics, Apr. 26, 1971, p. 41.

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