Method for fabricating a metal oxide semiconductor field effect

Details Method for fabricating a metal oxide semiconductor field effect Method for fabricating a metal oxide semiconductor field effect

1994-12-27

1996-06-18

Thomas, Tom

Fishing, trapping, and vermin destroying

437 35, 437 44, H01L 218234

Patent

active

055277250

ABSTRACT:
A metal oxide semiconductor field effect transistor having an increased channel length in a limited area of a highly integrated chip where a gate electrode is formed, and a method for fabricating the transistor. The transistor includes a semiconductor substrate having a protruded structure at a predetermined portion thereof, a gate oxide film surrounding the protruded structure of the semiconductor substrate, a polysilicon layer pattern for a gate electrode, the polysilicon layer pattern disposed over the gate oxide film, lightly doped drain regions formed in the semiconductor substrate respectively at opposite edges of the polysilicon layer pattern, and source and drain regions formed outward of the lightly doped drain regions in the semiconductor substrate respectively.

REFERENCES:
patent: 5089432 (1992-02-01), Yoo
patent: 5177027 (1993-01-01), Lowrey et al.
patent: 5262337 (1993-11-01), Kim
patent: 5403763 (1995-04-01), Yamazaki
patent: 5407848 (1995-04-01), Park et al.

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