Method for fabricating a metal-insulator-metal capacitor

Details Method for fabricating a metal-insulator-metal capacitor Method for fabricating a metal-insulator-metal capacitor

2009-09-07

2011-12-13

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S957000, C257SE21011

Reexamination Certificate

active

08076213

ABSTRACT:
A method for fabricating a metal-insulator-metal (MIM) capacitor includes providing a substrate comprising a bottom electrode, forming a dielectric layer positioned on the bottom electrode, and forming a top electrode positioned on the dielectric layer. The dielectric layer includes a silicon nitride film, the silicon nitride film has a plurality of Si—H bonds and a plurality of N—H bonds, and a ratio of Si—H bonds to N—H bonds being equal to or smaller than 0.5.

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Zhang, Processing and Characterisation of PECVD Silicon Nitride Films, 1996, Advenced Materials for Optics and Electronics, vol. 6, pp. 147-150, 1996.
Wolf, Silicon Processing for the VLSI Era, 2000, Lattice Press, vol. 1 Process Technology, pp. 202-203, 2000.
C. H. Ng et al., “Effect of the Nitrous Oxide Plasma Treatment on the MIM Capacitor”, Sep. 2002, p. 529-531, vol. 23, No. 9, IEEE Electron Device Letters.

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