Abrading – Abrading process – Utilizing shield
Reexamination Certificate
2006-08-22
2006-08-22
Ackun, Jr., Jacob K. (Department: 3723)
Abrading
Abrading process
Utilizing shield
C451S060000, C029S603070, C430S319000
Reexamination Certificate
active
07094130
ABSTRACT:
A method is described which uses a CMP slurry with an abrasive of spherical particles to lift-off photoresist used in the patterning of the sensor for a magnetic transducer. The spherical particles, preferably less than 0.015 microns, are preferably silica, alumina, titania or zirconia with colloidal silica being preferred. An alternative method of fabricating a CPP sensor structure according to the invention deposits a dielectric or CMP resistant metal over the hard bias structure. The CMP-resistant metal is preferably selected from the group consisting of rhodium, chromium, vanadium and platinum. A CMP resistant mask deposited over the dielectric or CMP-resistant metal can include an optional adhesion layer such as tantalum followed by a DLC layer. The CMP-assisted lift-off of the photoresist and the excess materials is executed at this point. The photoresist used to protect the selected area of the sensor structure is lifted-off using the slurry.
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Cyrille Marie-Claire
Dill Frederick Hayes
Li Jui-Lung
Ackun Jr. Jacob K.
Hitachi Global Storage Technologies - Netherlands B.V.
Knight G. Marlin
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