Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2007-03-30
2009-08-25
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S118000, C438S126000, C438S127000, C257SE21503, C257SE23119, C257SE23007, C257SE21517
Reexamination Certificate
active
07579215
ABSTRACT:
A method for fabricating a low cost integrated circuit package (600) includes separating a processed silicon wafer into a plurality of individual die (601) and then positioning the die (603) on a secondary substrate in a face down position for allowing an increased die I/O connection area. The die is covered (605) with one or more epoxy materials to form a group of embedded die packages. One or more pads on the die are then exposed (615) and subsequently connected (617) to an I/O connection in a die I/O connection area. Each of the die are then separated (619) forming singular embedded die packages from the secondary substrate. The method provides a manufacturing process to form a low cost, very high density integrated circuit package using a combination of both wafer scale packaging and wafer level packaging processes.
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PCT International Search Report dated Jul. 7, 2008, 16 Pages.
Fourson George
Motorola Inc.
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