Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-07-05
2011-07-05
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S154000, C257S021000
Reexamination Certificate
active
07972880
ABSTRACT:
A method for fabricating a LCD having enhanced aperture ratio and brightness includes: forming a gate line, a gate electrode, a common electrode and a common line in a first mask process; depositing a gate insulating layer covering the gate line, the gate electrode and the common electrode; forming an active layer on the gate insulating layer, and an ohmic contact layer on the active layer in a second mask process; forming a data line, a source electrode, and a drain electrode facing the source electrode in a third mask process; depositing a protective layer over the data line, the source electrode and the drain electrode; forming a pixel contact hole in a fourth mask process; and forming a pixel electrode, wherein the pixel electrode is connected to the drain electrode through the pixel contact hole in a fifth mask process using a reverse tapered photo-resist pattern.
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Jee Young Seung
Kim Jeong Oh
Kim Soopool
Oh Jae Young
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Mulpuri Savitri
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