Method for fabricating a liquid crystal display

Details Method for fabricating a liquid crystal display Method for fabricating a liquid crystal display

1993-12-15

1995-07-04

Picardat, Kevin

Fishing, trapping, and vermin destroying

437 21, 437 60, 437186, 437191, 437192, 359 59, H01L 21265

Patent

active

054299624

ABSTRACT:
A method for fabricating a top gate type polysilicon TFT liquid crystal display by: forming an active layer on a thin film transistor-forming region of a buffer layer atop a transparent substrate; forming a gate insulating film, gate electrode on the active region and a gate line implanting impurity ions in the active layer by use of the gate electrode as a mask so as to form a source region and a drain region; depositing an insulating film; forming contact holes in the insulating film, exposing the source region and the drain region therethrough; forming a transparent electrode on a picture cell of the insulating film; depositing a semiconductor layer doped with high density impurity and a metal layer, in due order; and applying an etch to the semiconductor layer and the metal layer selectively as to form a source electrode and a data line which are connected with the source region and to form a drain electrode which interconnects the drain region with the transparent electrode.

REFERENCES:
patent: 4885616 (1989-12-01), Ohta
patent: 5132821 (1992-07-01), Nicholas
patent: 5173792 (1992-12-01), Matsueda
patent: 5183780 (1993-02-01), Noguchi et al.
patent: 5214295 (1993-05-01), Manning
patent: 5233211 (1993-08-01), Hayashi et al.
patent: 5272099 (1993-12-01), Chou et al.
patent: 5289300 (1994-02-01), Yamazaki et al.

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