Method for fabricating a light exposure mask comprising the use

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430322, G03F 900

Patent

active

057210748

ABSTRACT:
A method for fabricating a light exposure mask, including forming a pattern on a wafer by use of a primary light exposure mask formed with a light shield film pattern in accordance with a design rule, transmitting, to a data comparison system, data obtained after measuring the size of the pattern on the wafer by use of a process defect inspection system, comparing the data with the size of the light shield film pattern, thereby detecting a portion of the pattern on the wafer which has a difference from a critical size value of the light shield film pattern, determining, by use of a compensation equation, an amendment value for a portion of the light shield film pattern which corresponds to the detected portion of the pattern on the wafer, and forming a secondary light exposure mask, based on the amendment value.

REFERENCES:
patent: 4751169 (1988-06-01), Behringer et al.
patent: 4805123 (1989-02-01), Specht et al.
patent: 4985927 (1991-01-01), Norwood et al.

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