Method for fabricating a lateral collector structure on a buried

Details Method for fabricating a lateral collector structure on a buried Method for fabricating a lateral collector structure on a buried

1998-12-17

2000-10-31

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

438341, 438481, H01L 21331

Patent

active

061401951

ABSTRACT:
The present invention provides a collector device in a bipolar device, having a lateral collector structure on a buried oxide layer. This collector has a high breakdown voltage for high power and operating at a high speed, by isolating a horizontal collector from a substrate by a buried oxide film and horizontally connecting a buried collector to a collector. The buried collector film is formed on the buried insulating film, surrounding the collector film and being horizontally connected to the collector film.

REFERENCES:
patent: 5422303 (1995-06-01), Klose et al.
patent: 5484738 (1996-01-01), Chu ent al.
patent: 5580797 (1996-12-01), Miwa et al.
patent: 5614425 (1997-03-01), Kimura et al.

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