Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1996-11-26
1998-08-04
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
372 45, H01L 2120
Patent
active
057892750
ABSTRACT:
The present invention relates to a method for fabricating a semiconductor laser diode in optical communication system, and the present invention uses both an oxide and a nitride pattern as an etch mask instead of the single oxide pattern in order to decrease the under cut of the edge of the oxide pattern.
REFERENCES:
patent: 4784722 (1988-11-01), Liau et al.
Cho Gyu Seog
Kim Tae Jin
Lee Soo Won
Oh Kyung Seok
Bowers Jr. Charles L.
Christianson Keith
Hyundai Electronics Industries Co,. Ltd.
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