Method for fabricating a laser diode

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation

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372 45, H01L 2120

Patent

active

057892750

ABSTRACT:
The present invention relates to a method for fabricating a semiconductor laser diode in optical communication system, and the present invention uses both an oxide and a nitride pattern as an etch mask instead of the single oxide pattern in order to decrease the under cut of the edge of the oxide pattern.

REFERENCES:
patent: 4784722 (1988-11-01), Liau et al.

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