Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-03-11
2009-10-27
Maldonado, Julio J. (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S198000, C438S275000, C438S486000
Reexamination Certificate
active
07608522
ABSTRACT:
A method for fabricating a hybrid orientation substrate includes steps of providing a direct silicon bonding (DSB) wafer having a first substrate with (100) crystalline orientation and a second substrate with (110) crystalline orientation directly bonded on the first substrate, forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer, performing an amorphization process to transform the first region of the second substrate into an amorphized region, and performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and to make the second region stressed by the first blocking layer.
REFERENCES:
patent: 6972478 (2005-12-01), Waite et al.
patent: 7023055 (2006-04-01), Ieong et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2006/0154429 (2006-07-01), de Souza et al.
patent: 2006/0223290 (2006-10-01), Belyansky et al.
patent: 2007/0215984 (2007-09-01), Shaheen et al.
patent: 2007/0246781 (2007-10-01), Tsuchiaki
Chun-Yung Sung, et al., “High Performance CMOS Bulk Technology Using Direct Silicon Bond (DSB) Mixed Crystal Orientation Substrates”, IEEE, 2005, USA.
Hsu Che-Hua
Huang Yao-Tsung
Lin Chien-Ting
Ma Guang-Hwa
Hsu Winston
Maldonado Julio J.
United Microelectronics Corp.
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