Method for fabricating a hard mask

Details Method for fabricating a hard mask Method for fabricating a hard mask

2005-02-08

2005-02-08

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000

Reexamination Certificate

active

06852640

ABSTRACT:
The method is for producing a hard mask on a substrate, and in particular, on a primary area of a semiconductor substrate. The method includes the following steps: forming a first hard mask layer on the substrate; forming at least one additional hard mask layer on the first hard mask layer; structuring the additional hard mask layer in such a way that an area of the first hard mask layer is exposed; and structuring the first hard mask layer while using the additional hard mask layer as a mask so that an area of the substrate is exposed. Additional hard mask layers can be formed on the first hard mask layer. These hard mask layers are successively structured while using at least one overlying hard mask layer as a mask, until the area of the substrate is exposed.

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patent: 5928965 (1999-07-01), Shoji et al.
patent: 6207573 (2001-03-01), Lee
patent: 0 865 079 (1998-09-01), None
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