Method for fabricating a half-tone type phase shift mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430322, 430324, 430329, 430394, G03F 900

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active

055567258

ABSTRACT:
A method is disclosed for the fabrication of a phase shift mask comprising the steps of: forming chrome patterns on a transparent substrate; coating a phase shift layer and a negative photosensitive film on the entire area of the resulting structure, in sequence; exposing the photosensitive film to a light incident from the backside of the transparent substrate with the chrome patterns serving as a mask and developing the illuminated area of the photosensitive film, to form photosensitive film patterns; etching the phase shift layer to form phase shift patterns which are each positioned between the chrome patterns, with the photosensitive film patterns serving as a mask; subjecting the chrome patterns to wet etching, to conduct etching at the upper surface and the opposite edges of the chrome patterns so that each of the chrome patterns are spaced from each of the phase shift patterns; and removing the photosensitive film patterns with the transparent substrate exposed through the spaces between the etched chrome patterns and the phase shift patterns. The present method is advantageous in that a conventional chrome mask is utilized, so that particular equipments and additional designing are not necessary while the production cost thereof is reduced. In addition, the method is superior to conventional ones in process capability, thereby increasing the production yield of the devices.

REFERENCES:
patent: 5130263 (1992-07-01), Possin et al.
patent: 5276551 (1994-01-01), Nakagawa
patent: 5300378 (1994-04-01), Minami
patent: 5380609 (1995-01-01), Fujita et al.
patent: 5409789 (1995-04-01), Ito

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