Method for fabricating a gridded Schottky barrier field effect t

Details Method for fabricating a gridded Schottky barrier field effect t Method for fabricating a gridded Schottky barrier field effect t

1976-01-16

1976-12-28

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 357 15, 357 22, B01J 1700

Patent

active

039992810

ABSTRACT:
A method is provided for fabricating a gridded Schottky barrier field effect transistor and to the transistor produced thereby. The transistor is constructed by means of a single high resolution mask which does not require alignment to any reference line. Utilizing the masking properties of an oxidation layer on the sides of the etched slots, platinum is deposited only at the bottom of the groove thereby eliminating the requirement of an additional photo-masking step or the necessity of subsequent removal of platinum from other surfaces of the wafer.

REFERENCES:
patent: 3675313 (1972-07-01), Driver
patent: 3920861 (1975-11-01), Dean
patent: 3938241 (1976-02-01), George

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