Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-09-13
2005-09-13
Schillinger, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S692000, C438S238000
Reexamination Certificate
active
06943038
ABSTRACT:
A method for fabricating a flux concentrating system (62) for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line (10) formed in a substrate (12) and forming a first material layer (24) overlying the bit line (10) and the substrate (12). Etching is performed to form a trench (58) in the first material layer (24) and a cladding layer (56) is deposited in the trench (52). A buffer material layer (58) is formed overlying the cladding layer (56) and a portion of the buffer material layer (58) and a portion of the cladding layer (56) is removed.
REFERENCES:
patent: 3699619 (1972-10-01), Yasuda et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5659499 (1997-08-01), Chen et al.
patent: 5702831 (1997-12-01), Chen et al.
patent: 5768181 (1998-06-01), Zhu et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 5946228 (1999-08-01), Abraham et al.
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6211090 (2001-04-01), Durlam et al.
patent: 6430085 (2002-08-01), Rizzo
patent: 6555858 (2003-04-01), Jones et al.
patent: 6798004 (2004-09-01), Grynkewich et al.
patent: 2004/0175846 (2004-09-01), Anthony
DeBear et al., “Spin-etch Planarization for Dual Damascene Interconnect Structures,” Solid State Technology, 5 pgs. (Mar. 2000).
Butcher Brian R.
Durlam Mark A.
Grynkewich Gregory W.
Meixner Thomas V.
Molla Jaynal A.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Schillinger Laura M
LandOfFree
Method for fabricating a flux concentrating system for use... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a flux concentrating system for use..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a flux concentrating system for use... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3403310