Method for fabricating a field emitter array incorporated with m

Details Method for fabricating a field emitter array incorporated with m Method for fabricating a field emitter array incorporated with m

1996-09-24

1999-02-16

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Electron emitter manufacture

438 28, H01L 2100

Patent

active

058720197

ABSTRACT:
The present invention provides field emitter arrays (FEAs) having incorporated with metal oxide semiconductor field effect transistors (MOSFETs) and method for fabricating the same which realizes a simultaneous fabrication of two kinds of devices, namely, the FEA and MOSFETs, by using common processing steps among the processes of fabricating the Si-FEA or the metal FEA and the MOSFETs, wherein the method comprises steps of forming field emission tips and active regions for MOSFETs by oxidizing selected portions of the silicon nitride layer, forming a gate insulating oxide layers for the FEA and field oxide layers for MOSFETs simultaneously by the LOCOS method and connecting gate electrodes(row line) and cathode electrodes(column line) of the FEA to MOSFETs.

REFERENCES:
patent: 5212426 (1993-05-01), Kane
patent: 5359256 (1994-10-01), Gray
patent: 5448132 (1995-09-01), Komatsu
patent: 5455196 (1995-10-01), Frazier

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