Method for fabricating a field emission display

Details Method for fabricating a field emission display Method for fabricating a field emission display

1996-05-15

2000-09-19

Chaudhari, Chandra

Semiconductor device manufacturing: process

Electron emitter manufacture

438105, 438228, H01L 2100

Patent

active

061210668

ABSTRACT:
A field emission display and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mold; growing a diamond on the silicon mold, to form a diamond tip; forming a conductive layer on the diamond tip; bonding a first substrate to the conductive layer; removing the silicon mold; forming a gate insulating layer and gate electrode on the diamond tip; and etching the gate electrode and gate insulating layer to expose an electron emission portion of the tip, and thereby form a gate hole. By doing so, the operation voltage is reduced, compared with the diode-type display, and high-responsibility field emission display can be realized by applying (-) or (+) voltage to the gate electrode.

REFERENCES:
patent: 5529524 (1996-06-01), Jones
patent: 5772904 (1995-06-01), Kim
patent: 5827752 (1996-07-01), Ju et al.
Okano et al., "Fabrication of a diamond field emitter array", Appl. Phys. Lett., vol. 64, No. 20, pp. 2742-2744 (1994).

Affiliated with

Also associated with

Rating

Method for fabricating a field emission display does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a field emission display, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a field emission display will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1071889