Method for fabricating a field emission device having reduced ro

Details Method for fabricating a field emission device having reduced ro Method for fabricating a field emission device having reduced ro

1997-08-18

1998-10-13

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

438 20, 438 28, 438 34, H01L 2100

Patent

active

058211322

ABSTRACT:
A method for fabricating a diamond-like carbon field emission device (300, 800) includes the steps of: (i) forming on a column conductor (330, 830) a ballast layer (364), (ii) forming on the ballast layer (364), in registration with a central well region (332, 832) of the column conductor (330, 830), a surface emitter (370, 870) made from diamond-like carbon, (iii) forming on the ballast layer (364) and surface emitter (370, 870) a field shaping layer (374), (iv) pattering the ballast layer (364) and the field shaping layer (374) to form a ballast (365) and field shaper layer (377) having opposed edges which, with the opposed edges of the column conductor (330, 830), define smooth, continuous surfaces (371, 871), (v) depositing a blanket dielectric layer (341), and (vi) forming an emission well (360, 860) above the central well region (332, 832) of the column conductor (330, 830).

REFERENCES:
patent: 4040080 (1977-08-01), Hara et al.
patent: 5420443 (1995-05-01), Dreifus et al.
patent: 5719406 (1998-02-01), Cisneros et al.
patent: 5996385 (1997-12-01), Song et al.
"Lithography Using Electron Beam Induced Etching of a Carbon Film" by Wang et al., J. Vac. Sci. Technol., Sep./Oct. 1995, pp. 1984-1987.
"Lithographic Application of Diamond-Like Carbon Films" by Seth et al., Thin Solid Films vol. 254, 1995, pp. 92-95.

Affiliated with

Also associated with

Rating

Method for fabricating a field emission device having reduced ro does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a field emission device having reduced ro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a field emission device having reduced ro will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-312759