Semiconductor device manufacturing: process – Electron emitter manufacture
Patent
1997-07-25
2000-03-07
Niebling, John F.
Semiconductor device manufacturing: process
Electron emitter manufacture
257163, 257164, 257165, 257166, 313230, 313309, 313336, 313346R, 313347, 313346DC, 313355, 445 50, 445 51, 445 58, H01L 2100
Patent
active
060339241
ABSTRACT:
A method for fabricating a field emission device (200) includes the steps of forming on the surface of a substrate (110) a cathode (112), forming on the cathode (112) a dielectric layer (114), forming an emitter well (115) in the dielectric layer (114), forming within the emitter well (115) an electron emitter structure (118) having a surface (123), forming on a portion of the dielectric layer (114) a gate electrode (116), depositing on the dielectric layer (114) a sacrificial layer (210), thereafter depositing on the surface (123) of the electron emitter structure (118) a coating material (220, 320, 420) that has an emission-enhancing material, and then removing the sacrificial layer (210).
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Chalamala Babu R.
Pack Sung P.
Dockrey Jasper
Motorola Inc.
Niebling John F.
Pickens S. Kevin
Wills Kevin D.
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