Method for fabricating a field effect transistor with a self-ali

Details Method for fabricating a field effect transistor with a self-ali Method for fabricating a field effect transistor with a self-ali

1994-09-30

1995-07-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 26, 437 41, 437 44, H01L 218234

Patent

active

054299560

ABSTRACT:
A structure and method for fabricating a field effect transistor (FET) having improved drain to source punchthrough properties was achieved. The method utilizes the selective deposition of silicon oxide by a Liquid Phase Deposition (LPD) method to form a self-aligning implant mask. The mask is then used to implant a buried anti-punchthrough implant channel under and aligned to the gate electrode of the FET. The buried implant reduces the depletion width at the substrate to source and drain junction under the gate electrode but does not increase substantially the junction capacitance under the source and drain contacts, thereby improving punch-through characteristic while maintaining device performance.

REFERENCES:
patent: 4987093 (1991-01-01), Teng et al.
patent: 5210042 (1993-05-01), Oshikawa
patent: 5278078 (1994-01-01), Kanebako et al.
patent: 5286664 (1994-02-01), Horiuchi
patent: 5306657 (1994-04-01), Yang
patent: 5308777 (1994-05-01), Hong
patent: 5378650 (1995-01-01), Kimura

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