Method for fabricating a field effect transistor using microtren

Details Method for fabricating a field effect transistor using microtren Method for fabricating a field effect transistor using microtren

1996-06-07

1998-04-07

Trinh, Michael

Fishing, trapping, and vermin destroying

437 44, 437203, H01L 2186

Patent

active

057364184

ABSTRACT:
According to the present invention, there is provided a method for fabricating a field effect transistor having reduced hot electron effects. In one embodiment, the method comprises the steps of disposing a gate oxide layer on a semiconductor substrate; disposing a gate material on the gate oxide layer; masking a portion of the gate material; anisotropically etching a gate structure into the gate material such that a trench is formed in the semiconductor substrate; implanting a source structure in the semiconductor substrate, the source structure having a first doping region superjacent a second doping region, the second doping region being lightly doped relative to the first doping region.

REFERENCES:
patent: 4499652 (1985-02-01), Shrivastava
patent: 4521698 (1985-06-01), Taylor
patent: 4642492 (1987-02-01), Beck et al.
patent: 4691433 (1987-09-01), Pimbley et al.
patent: 4859620 (1989-08-01), Wei et al.
patent: 4914050 (1990-04-01), Shibata
patent: 4951100 (1990-08-01), Parrillo
patent: 5007982 (1991-04-01), Tsou
patent: 5017265 (1991-05-01), Park et al.
patent: 5082796 (1992-01-01), El-Diwany et al.
patent: 5098866 (1992-03-01), Clark et al.
patent: 5142640 (1992-08-01), Iwamatsu
patent: 5177571 (1993-01-01), Satoh et al.
patent: 5182234 (1993-01-01), Meyer
patent: 5231042 (1993-07-01), Ilderem et al.
patent: 5352914 (1994-10-01), Farb
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5430324 (1995-07-01), Bencuya
patent: 5488003 (1996-01-01), Chambers et al.
patent: 5491099 (1996-02-01), Hsu

Affiliated with

Also associated with

Rating

Method for fabricating a field effect transistor using microtren does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a field effect transistor using microtren, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a field effect transistor using microtren will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-12570